MIW75N65F-BP

Overview

The MIW75N65F-BP is a Trench and Field Stop Insulated Gate Bipolar Transistor manufactured by Micro Commercial Components. It features a TO-247AB package with three terminals (Gate, Collector, Emitter) for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous DC collector current of 85 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.95 V typical at 25°C and a gate-emitter threshold voltage ranging from 4.25 V to 5.9 V. Power dissipation reaches 395 W, with an operating junction temperature range spanning -40°C to +175°C.

Feature Summary

• Trench and Field Stop technology designed for high-speed smooth switching in both hard and soft switching applications.
• Collector-emitter saturation voltage exhibits a positive temperature coefficient, ensuring high ruggedness and good thermal stability.
• Manufactured as a halogen-free 'Green' device with epoxy meeting UL 94 V-0 flammability ratings.
• Lead-free finish and RoHS compliant construction.

Applications

• High-frequency power conversion circuits
• Motor drive systems requiring robust thermal performance
• Industrial inverter topologies

Procurement Notes

Verify the component authenticity by checking the manufacturer's markings against official datasheet specifications. Confirm the presence of the 'BP' suffix indicates RoHS compliance. Purchase only from authorized distributors to ensure traceability and avoid counterfeit parts. Review the latest revision of the datasheet for any updates to mechanical dimensions or electrical limits before finalizing procurement orders.

Selection Notes

Select this component when a 650 V IGBT with high current handling capability is required. Ensure the application circuit can manage the specified gate-emitter voltage limits of ±30 V transiently. Verify that the thermal management system can handle the 395 W power dissipation rating. Consider the positive temperature coefficient of Vce(sat) for parallel operation requirements. Check if the TO-247AB package fits the available PCB footprint and mounting constraints.

Part Context

This part belongs to the MIW75N65F series of N-channel IGBTs from Micro Commercial Components. It utilizes advanced trench gate technology to optimize switching losses and conduction characteristics. The device is distinct from MOSFETs due to its bipolar conduction mechanism, offering lower on-state voltage drops at high currents compared to unipolar devices.

Replacement Considerations

Direct pin-to-pin replacements must match the 650 V rating, TO-247AB package, and similar Vce(sat) and current capabilities. Verify that substitute components meet the same thermal resistance and switching speed requirements. Cross-reference with other manufacturers' 650V Trench Field Stop IGBTs in the TO-247 package family.

FAQ

What is the maximum transient gate-emitter voltage allowed?

The maximum transient gate-emitter voltage is ±30 V.

Does the MIW75N65F have an integrated freewheeling diode?

Yes, the datasheet provides electrical characteristics for the internal diode, including forward voltage and reverse recovery parameters.

What is the thermal resistance from junction to case?

The IGBT thermal resistance from junction to case is 0.38°C/W.