MIXA150Q1200VA

Description：IGBT MOD 1200V 220A 695W V1A-PAK
Series：-

SKU:508109698b19 Category: IGBT Modules Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 220A 695W V1A-PAK
Series：-
Mfr：IXYS
Package：Box
IGBT Type：PT
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 150A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：V1A-PAK
Supplier Device Package：V1A-PAK
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：220 A
Power - Max：695 W
Current - Collector Cutoff (Max)：100 µA
Input Capacitance (Cies) @ Vce：-

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MIXA150Q1200VA

Overview

The MIXA150Q1200VA is a single-channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It utilizes Punch-Through (PT) technology and is housed in a V1A-PAK package designed for chassis mounting. The device features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 220 A. Maximum power dissipation is specified at 695 W, with an operating junction temperature range from -40°C to 150°C.

Feature Summary

Single-channel IGBT configuration utilizing Punch-Through technology
V1A-PAK package design optimized for chassis mounting applications

Applications

Industrial motor drives
Power inverters
Uninterruptible power supply systems

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm that the specific part number matches the required technical specifications before procurement. Check for end-of-life notices or product change notifications, as this item may have discontinuation status. Ensure storage conditions comply with moisture sensitivity level requirements to maintain device integrity prior to assembly.

Selection Notes

Select this module when a 1200 V blocking capability and high current handling are required in a compact form factor. The V1A-PAK package facilitates efficient thermal management via direct chassis mounting. Consider the PT technology characteristics for switching performance requirements. Verify that the application environment supports the specified junction temperature limits and thermal dissipation needs.

Part Context

This component belongs to the MIXA series of IGBT modules produced by IXYS Corporation. The series focuses on providing robust power semiconductor solutions for industrial applications. The MIXA150Q1200VA specifically represents a single-phase configuration within this lineup, offering a balance between current capacity and packaging efficiency for various power conversion tasks.