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The MIXA225PF1200TSF is an N-channel IGBT module manufactured by IXYS, featuring a SimBus F package with PCB mounting. It contains two transistors and supports a maximum continuous collector current of 360 A at 25°C. The device withstands a maximum collector-emitter voltage of 1200 V and has a maximum power dissipation of 1100 W. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.8 V and a gate-emitter voltage limit of ±30 V. The module operates within a temperature range of -40°C to 150°C and measures 152 mm in length, 17 mm in height, with 11 pins.
Verify the specific ordering suffix against official IXYS documentation to confirm pinout and terminal configuration. Ensure that the selected variant matches the required thermal interface and mechanical dimensions for the target application. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and traceability before finalizing procurement orders.
Select this component based on its 1200 V blocking capability and 360 A current rating for high-power applications. Consider the 1.8 V saturation voltage for conduction loss calculations and the 1100 W power dissipation limit for thermal management design. Verify compatibility with the SimBus F footprint and ensure the operating temperature range meets the environmental requirements of the system.
This module belongs to the MIXA series from IXYS, designed for high-efficiency power conversion. The XPT technology enhances short-circuit ruggedness and reduces switching losses. The inclusion of an NTC thermistor allows for precise thermal feedback control in demanding industrial and energy applications.
Direct substitutes are not explicitly confirmed in public data. Evaluate other IXYS MIXA series modules with matching voltage and current ratings, ensuring identical package type and pin configuration for mechanical compatibility.