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The MIXA60W1200TED is a silicon-based IGBT module manufactured by IXYS, belonging to the MIXA60W1200 series with XPT technology. It features a six-pack configuration housed in an E2-Pack screw-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 85 A at 25°C. Key electrical parameters include a saturation voltage of 1.8 V, gate-emitter leakage current of 500 nA, and power dissipation of 290 W. Operating temperatures range from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS compliance status via official datasheets before integration. Ensure storage conditions align with semiconductor handling standards to prevent moisture damage. Validate part markings against manufacturer specifications to avoid counterfeit risks during acquisition.
Select this module for applications requiring high current density within a compact footprint. Compare thermal resistance values against heatsink capabilities to ensure adequate cooling. Evaluate switching frequency requirements against the device's dynamic characteristics. Consider system voltage levels to confirm compatibility with the 1.2 kV rating under transient conditions.
This component is part of IXYS' MIXA series, which utilizes XPT (Extra Punch Through) technology for improved efficiency. The series offers various current ratings within similar packaging formats, allowing designers to scale power output while maintaining consistent mechanical interfaces. It serves as a core switching element in modern power electronics architectures.
Direct substitutes may include other IXYS six-pack modules with matching voltage and current ratings, such as those from the same MIXA family. Verify pinout compatibility and thermal interface dimensions before substitution. Cross-reference datasheet parameters to ensure equivalent performance in specific circuit topologies.