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The MIXA61H1200ED is an IXYS IGBT XPT module configured as a half-bridge. It features a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC25) of 85 A at 25°C case temperature. The saturation voltage (VCE(sat)) is 1.8 V at 55 A, with a total power dissipation of 290 W. The integrated SONIC diode provides a forward voltage of 1.95 V at 60 A. Thermal resistance from junction to case is 0.43 K/W for the IGBT and 0.6 K/W for the diode. The unit utilizes an E2-Pack package with an insulated copper base plate.
Verify component authenticity by cross-referencing the UL marking and Date Code format against official IXYS documentation. Confirm that the ordering code matches the standard box delivery mode. Ensure thermal interface materials are compatible with the specified mounting torque requirements for reliable heat dissipation during operation.
Select this module for applications requiring high ruggedness and short-circuit tolerance up to 10 µsec. The 1200 V rating supports medium-voltage inverter topologies. Evaluate the 85 A current capacity against peak load demands, considering the derating required at elevated case temperatures above 25°C.
This component belongs to the IXYS MIXA series of XPT IGBT modules. The 'H' designation indicates a half-bridge configuration, while '61' specifies the 60 A class current rating. The 'ED' suffix identifies the specific E2-Pack housing style used for PCB mounting and screw-down terminal connections.
Direct replacements within the same family include MIXA61H1200TM or MIXA61H1200TED, provided the pinout and mechanical dimensions remain compatible with the existing heatsink and PCB layout constraints.
The module is rated for a non-repetitive short-circuit duration of 10 µsec under specified conditions.
The SONIC diode offers fast and soft reverse recovery with low operating forward voltage, reducing switching losses and electromagnetic interference.
The module provides an isolation voltage of 3000 V~ between the terminals and the base plate.