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Product Detailed Parameters
- Description：IGBT MODULE MIXG240W1200PTEH-PC
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The MIXG240W1200PT-PC is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a 1200V collector-emitter breakdown voltage and supports a continuous collector current of 240A. The device utilizes PT (Punch-Through) technology to optimize switching performance and conduction losses. Designed for robust industrial applications, it operates within a junction temperature range of -40°C to +150°C. The module integrates an IGBT chip with a built-in fast recovery free-wheeling diode in a single configuration, providing efficient power switching capabilities for demanding electronic systems.
Feature Summary
- High power density design suitable for compact industrial power electronics
- Integrated fast recovery free-wheeling diode for efficient commutation
- Optimized punch-through technology for low conduction and switching losses
Applications
- Industrial motor drives and servo systems
- Solar photovoltaic inverters
- Uninterruptible Power Supply (UPS) systems
Procurement Notes
Verify the specific suffix 'PC' against the official IXYS datasheet to confirm package type and terminal configuration. Ensure compatibility with existing thermal management solutions and gate drive requirements before integration. Confirm RoHS compliance status and check for any recent product change notices or end-of-life announcements from the manufacturer.
Selection Notes
Select this module for applications requiring high voltage blocking capability and substantial current handling in a single package. Consider the thermal resistance characteristics and mounting requirements when designing the heat sink interface. Evaluate the switching speed versus conduction loss trade-off inherent in PT technology for the specific frequency requirements of the target application.
Part Context
This component belongs to the IXYS MIXG series of IGBT modules, which are engineered for high-efficiency power conversion. The series is characterized by advanced silicon technology aimed at reducing energy consumption in industrial and renewable energy applications. It represents a solution for replacing older discrete components with integrated modular designs for improved reliability.
Replacement Considerations
Direct pin-to-pin replacements may be limited due to specific package dimensions and internal die configurations. Verify electrical parameters such as Vce(sat) and switching times against potential alternatives. Consult IXYS documentation for recommended upgrade paths or cross-reference with similar modules in the MIXG or MIXA families if exact matches are unavailable.
