MIXG490PF1200PTSF

Description：IGBT MODULE - PHASELEG SIMBUS F-
Series：-

SKU:ae6b127aa95c Category: IGBT Modules Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE - PHASELEG SIMBUS F-
Series：-
Mfr：IXYS
Package：Box
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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MIXG490PF1200PTSF

Overview

The MIXG490PF1200PTSF is an N-channel IGBT module manufactured by IXYS. It features a half-bridge configuration with two transistors housed in a SimBus F package designed for PCB installation. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 490 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a power dissipation rating of 2.3 kW, and a gate-emitter voltage limit of ±20 V. The module operates within a temperature range of -40°C to +175°C.

Feature Summary

Utilizes Xtreme Packed Technology (XPT) for optimized switching performance and ruggedness.
Features a positive temperature coefficient for the on-state voltage to facilitate easy paralleling.
Employs a low-inductance SimBus F packaging design suitable for high-power applications.

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency welding inverters

Procurement Notes

Verify the specific suffix 'TSF' against official IXYS documentation to confirm pinout compatibility and thermal interface specifications. Ensure that the procurement source provides valid RoHS compliance certificates as required for electronic assembly standards. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing processes and material compositions before finalizing orders.

Selection Notes

Select this component when designing circuits requiring high current handling capabilities up to 490 A with a 1200 V blocking voltage. The SimBus F package is appropriate for applications demanding low parasitic inductance and efficient PCB mounting. Consider the 1.8 V saturation voltage for conduction loss calculations and ensure the thermal management system can handle the specified 2.3 kW power dissipation at the maximum operating temperature of 175°C.

Part Context

This module belongs to the IXYS MIXA/MIXG series of high-power IGBT modules. These components are engineered for robust operation in demanding power electronics environments. The XPT technology distinguishes this series by offering improved short-circuit withstand capability and reduced switching losses compared to standard field-stop designs, making it suitable for modern high-efficiency inverter topologies.

Replacement Considerations

Direct replacements must match the 1200 V rating, 490 A current capacity, and SimBus F footprint. Verify that alternative parts support the same 1.8 V Vce(sat) and 175°C junction temperature limits. Check for identical pin configurations to ensure board compatibility without redesigning the layout or thermal interface.