MJ11015G

Single Bipolar Transistors Overview

The MJ11015G is a PNP Darlington power transistor manufactured by onsemi, designed for use as an output device in complementary general-purpose amplifier applications. It features a maximum collector-emitter voltage of 120 Vdc and a continuous collector current rating of 30 Adc. The device supports a total device dissipation of 200 W at a case temperature of 25 °C, with a junction-to-case thermal resistance of 0.87 °C/W. It operates within a junction temperature range of -55 °C to +200 °C. The DC current gain (hFE) is specified with a minimum of 1000 at a collector current of 20 Adc and 5 Vdc. The transistor utilizes a TO-204AA (TO-3) through-hole package.

Single Bipolar Transistors Feature Summary

• Monolithic construction incorporating a built-in base-emitter shunt resistor
• High DC current gain capability suitable for high-current applications
• Extended operating junction temperature range up to +200 °C

Single Bipolar Transistors Applications

• Output devices in complementary general-purpose amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm package type and environmental compliance status. Confirm that the procurement channel sources directly from authorized distributors or the manufacturer to ensure component authenticity. Review the datasheet revision history for any updates regarding discontinuation notices or rebranding changes associated with this part number.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high DC current gain and robust power handling capabilities. Ensure the application design accounts for the thermal resistance characteristics and safe operating area limits defined in the datasheet. Verify that the drive circuitry can supply the necessary base current to achieve the required saturation levels under load conditions.

Single Bipolar Transistors Part Context

This component belongs to the MJ1101x series of high-current complementary silicon transistors produced by onsemi. The series includes NPN variants designated as MJ11012 and MJ11016, which are intended for use alongside the PNP MJ11015G in push-pull amplifier configurations. All devices share similar monolithic construction techniques and packaging standards.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the MJ11012 and MJ11016 for complementary NPN requirements within the same series.