Single Bipolar Transistors MJD210G product image

MJD210G

$0.84
  • Description:TRANS PNP 25V 5A DPAK
  • Series:-

SKU:f40b12a5036c Category: Brand:

  
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MJD210G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 25V 5A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJD210G

  • Description:TRANS PNP 25V 5A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V
  • Power - Max:1.4 W
  • Frequency - Transition:65MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJD210G

MJD210G

Single Bipolar Transistors Overview

The MJD210G is a PNP silicon power transistor designed for surface mount applications in the DPAK (TO-252) package. It features a collector-emitter voltage of 25 Vdc and continuous collector current of 5.0 Adc. The device offers high DC current gain, with a minimum of 70 at 500 mAdc, and a current-gain-bandwidth product of 65 MHz. Total power dissipation reaches 12.5 W at 25°C case temperature. It operates within a junction temperature range of -65 to +150°C.

Single Bipolar Transistors Feature Summary

  • Designed for low voltage, low-power, high-gain audio amplifier applications
  • Annular construction provides low leakage characteristics
  • Lead formed specifically for surface mount applications in plastic sleeves
  • Epoxy material meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

  • Low voltage audio amplifier circuits
  • Low-power switching applications
  • High-gain amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm shipping configuration and compliance status. Confirm that the component matches the required Pb-Free and RoHS specifications. Ensure the package type aligns with the designated surface mount footprint requirements for the target design.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 25 V collector-emitter rating and 5 A continuous current capability is required. Consider the thermal resistance values and safe operating area curves for heat dissipation planning. Verify compatibility with the intended PCB pad layout for the DPAK package style.

Single Bipolar Transistors Part Context

This part belongs to the complementary MJD200/MJD210 series of plastic power transistors manufactured by onsemi. The series includes both NPN (MJD200) and PNP (MJD210) variants optimized for similar surface mount applications. The MJD210 serves as the PNP counterpart to the MJD200 NPN device.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's datasheet for direct complementary parts or updated equivalents. Verify pinout compatibility and electrical ratings before substituting any alternative components.

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