Single Bipolar Transistors MJD210T4 product image

MJD210T4

$0.35
  • Description:TRANS PNP 25V 5A DPAK
  • Series:-

SKU:08614a57cda3 Category: Brand:

  
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MJD210T4 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 25V 5A DPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJD210T4

  • Description:TRANS PNP 25V 5A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V
  • Power - Max:1.4 W
  • Frequency - Transition:65MHz
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJD210T4

MJD210T4

Single Bipolar Transistors Overview

The MJD210T4G is a PNP silicon epitaxial planar power transistor manufactured by onsemi in the DPAK (TO-252) surface-mount package. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 25 V. The device offers a high DC current gain ranging from 45 to 180 at specified test conditions, with a transition frequency of 65 MHz. Total power dissipation reaches 12.5 W when mounted on a minimum pad size at a case temperature of 25 °C. The component operates within a junction temperature range of -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

  • Designed for low voltage, low-power, high-gain audio amplifier applications
  • Annular construction provides low leakage characteristics
  • Lead formed specifically for surface mount applications
  • Epoxy material meets UL 94 V-0 flammability standards

Single Bipolar Transistors Applications

  • Low voltage audio amplifiers
  • Low-power switching circuits
  • High-gain amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm shipping format and compliance status. Confirm that the procurement channel sources directly from authorized distributors or the manufacturer to ensure authenticity. Check for RoHS compliance markers and verify the presence of the Pb-Free indicator on the physical component packaging prior to integration into production lines.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a single PNP transistor capable of handling continuous currents up to 5 A in a compact surface-mount footprint. Ensure the application circuit maintains the collector-emitter voltage below the 25 V maximum rating. Consider the thermal resistance values when designing heat dissipation strategies for high-power dissipation scenarios.

Single Bipolar Transistors Part Context

This part belongs to the MJD200/MJD210 complementary plastic power transistor series designed for surface mount applications. The MJD210 serves as the PNP counterpart to the NPN MJD200. Both devices are engineered for use in audio amplifier circuits where high gain and low saturation voltage are required.

Single Bipolar Transistors Replacement Considerations

MJD210TF is listed as a discontinued alternative within the same product family.

MJD210T4MJD210T4
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