MJD253-1G

Single Bipolar Transistors Overview

The MJD253-1G is a PNP silicon transistor manufactured by onsemi, housed in an IPAK (TO-251) surface-mount package with straight leads. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 4 A. The device offers a high DC current gain, specified as a minimum of 40 at 200 mA and 15 at 1.0 A. Its low saturation voltage is 0.3 V max at 500 mA and 0.6 V max at 1.0 A. The transition frequency is 40 MHz min at 100 mA, supporting operation up to +150 °C junction temperature.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient switching control
• Low collector-emitter saturation voltage for reduced power loss
• High current-gain-bandwidth product for faster response
• Annular construction design to minimize leakage current

Single Bipolar Transistors Applications

• General-purpose switching applications
• Power management circuits
• Driver stages for higher-power loads

Single Bipolar Transistors Procurement Notes

Verify the part number suffix to confirm lead configuration. The -1G suffix indicates a straight lead version suitable for insertion mount or specific surface mount processes. Confirm RoHS compliance status and ensure the supplier provides official datasheets matching the ON Semiconductor specification sheet for accurate electrical parameter validation before integration.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage ratings and high current capability is required in a compact surface-mount form factor. The TO-251 package facilitates thermal dissipation up to 12.5 W. Consider the specific hFE requirements for your base drive circuit, as gain varies significantly between low and high current operating points.

Single Bipolar Transistors Part Context

This device belongs to the MJD253 series of PNP transistors designed for robust performance in power applications. The series utilizes annular construction technology to achieve low leakage characteristics. The -1G variant specifically denotes the straight lead configuration within the IPAK package family, distinguishing it from formed lead or tape-and-reel versions.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP transistors in the TO-251 package with comparable VCEO and IC ratings. Verify pinout compatibility and thermal resistance values. Ensure replacement devices meet the same saturation voltage and gain specifications to maintain circuit performance without redesign.