MJD2873-13

Single Bipolar Transistors Overview

The MJD2873-13 is a single NPN silicon power transistor manufactured by Diodes Incorporated, designed for high-voltage switching applications. It utilizes the TO-252 (DPAK) surface-mount package to facilitate automated assembly and efficient thermal management. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 2 A. With a maximum power dissipation of 2.6 W and an operating temperature range extending from -55°C to +150°C, it provides robust performance in compact electronic designs requiring reliable bipolar junction transistor functionality.

Single Bipolar Transistors Feature Summary

• High-voltage capability suitable for demanding switching environments
• Surface-mount construction for automated PCB integration
• Extended thermal stability across wide industrial temperature ranges

Single Bipolar Transistors Applications

• General-purpose high-voltage switching circuits
• Power supply output stages
• Driver circuits for loads requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm exact electrical tolerances and packaging configurations. Ensure that the procurement channel sources genuine components with traceable manufacturing data. Cross-reference the part number with the latest datasheet revisions to confirm compliance with current RoHS and REACH standards before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN configuration is required within a TO-252 footprint. Evaluate the 50 V breakdown voltage and 2 A current limits against circuit load requirements. Consider the thermal resistance characteristics inherent to the DPAK package for heat dissipation planning. Confirm compatibility with existing board space constraints and soldering profiles during the design phase.

Single Bipolar Transistors Part Context

This component belongs to the Bipolar Junction Transistor (BJT) category within Diodes Incorporated's discrete semiconductor portfolio. It serves as a fundamental active element for amplification and switching tasks. The product line emphasizes reliability and standardized packaging to support mass production in consumer electronics and industrial control systems where consistent performance is critical.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN transistors in TO-252 packages with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before implementing any alternative components to ensure circuit integrity.