MJD44H11-13

Single Bipolar Transistors Overview

The MJD44H11-13 is an NPN silicon power bipolar junction transistor manufactured by Diodes Incorporated. It utilizes low voltage multi epitaxial planar technology and is housed in a TO-252-3 (DPAK) surface-mount package. Key electrical ratings include a collector-emitter voltage of 80 V, a collector-base voltage of 100 V, and an emitter-base voltage of 7 V. The device supports a continuous collector current of 8 A with a peak current capacity of 16 A. Power dissipation is rated at 2.7 W at ambient temperature and 20 W when mounted on a heatsink at 25°C. The minimum DC current gain is 40, with a transition frequency of 3 MHz. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• Fast switching speed suitable for high-frequency applications
• Designed for general-purpose linear and switching uses

Single Bipolar Transistors Applications

• Switching regulators
• Power converters
• Output or driver stages in power amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer designation, as the MJD44H11 part number is historically associated with ON Semiconductor/Nexperia. Confirm that the Diodes Incorporated version meets all required electrical parameters, particularly the 80V rating and 8A current limit, before integration. Ensure the TO-252-3 package footprint matches the design layout. Check for RoHS compliance documentation provided by the supplier.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring an NPN power transistor with moderate voltage handling and high current capability in a compact surface-mount form factor. The low saturation voltage aids in reducing conduction losses. Consider thermal management requirements given the 2.7W ambient dissipation limit. Verify compatibility with driving circuits due to the specified current gain characteristics.

Single Bipolar Transistors Part Context

This component belongs to the MJD44H11 series of complementary power transistors, which typically includes a PNP counterpart (MJD45H11). These devices are engineered for surface-mount applications where space constraints exist alongside power handling needs. The series is characterized by its robust construction using multi epitaxial planar technology, ensuring reliability in demanding electronic environments.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include the MJD44H11T4 from STMicroelectronics or the standard MJD44H11 from ON Semiconductor/Nexperia. Verify pinout compatibility and ensure electrical specifications such as VCEO, IC, and PD match the original design requirements.