MJE15028G

$1.73

Description：TRANS NPN 120V 8A TO-220
Series：-

SKU:9247bc457fc6 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

MJE15028G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 120V 8A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE15028G

Description：TRANS NPN 120V 8A TO-220
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：8:00 AM
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 100mA, 1A
Current - Collector Cutoff (Max)：100µA
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 4A, 2V
Power - Max：50 W
Frequency - Transition：30MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MJE15028G

MJE15028G

Single Bipolar Transistors Overview

The MJE15028G is an NPN silicon plastic power transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 120 Vdc and a continuous collector current (IC) of 8.0 Adc. The device supports a peak collector current of 16 Adc and has a total device dissipation of 50 W at a case temperature of 25°C. It operates within a junction temperature range of -65°C to +150°C. The component utilizes a TO-220 package with a thermal resistance from junction to case of 2.5°C/W.

Single Bipolar Transistors Feature Summary

Designed for high-frequency driver applications in audio amplifiers
Features a high current gain-bandwidth product
Utilizes a compact TO-220 plastic package

Single Bipolar Transistors Applications

High-frequency drivers in audio amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific part number suffix against official documentation to confirm lead-free status and RoHS compliance. Ensure that the ordering information matches the required shipping configuration, such as units per rail. Confirm that the device meets all applicable environmental standards before integration into final assemblies.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN power transistor with a 120 V collector-emitter breakdown voltage and an 8 A continuous current rating. Consider the 50 W power dissipation capability and the thermal characteristics provided in the datasheet for appropriate heat sinking requirements.

Single Bipolar Transistors Part Context

This device belongs to the complementary silicon plastic power transistor series produced by onsemi. It is electrically paired with the MJE15029 PNP transistor. Both devices share similar structural designs intended for use in high-frequency driver applications within audio amplifier systems.