MJE18008

Single Bipolar Transistors Overview

The MJE18008 is a silicon NPN power transistor designed for high-voltage switching applications. It features a maximum collector-emitter voltage of 450V and a continuous collector current rating of 10A. The device is housed in a TO-220AB flange mount package with the case connected to the collector. It supports a maximum power dissipation of 125W and utilizes through-hole terminals for mounting.

Single Bipolar Transistors Feature Summary

• High voltage capability suitable for demanding switching environments
• Robust current handling for power control circuits
• Collector-connected flange mount package for thermal management

Single Bipolar Transistors Applications

• General purpose power switching
• High voltage amplifier stages
• Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as historical data indicates production by Motorola which is now part of NXP. Confirm the package type matches the required TO-220AB form factor. Ensure the component meets the necessary electrical ratings for the intended circuit design before integration.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor requires high voltage blocking and moderate current capacity. The TO-220AB package facilitates heatsinking for thermal regulation. Consider the collector-connected case for proper grounding or isolation strategies within the system architecture.

Single Bipolar Transistors Part Context

This device belongs to the family of discrete power transistors used in analog and digital power circuits. It serves as a fundamental building block for controlling higher power loads using lower power signals. The technology relies on silicon semiconductor properties for reliable operation under specified electrical stress conditions.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.