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MJE5851 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 350V 8A TO-220. Review the specifications below when checking this part for your BOM.
The MJE5851 is a PNP silicon power transistor designed for high-voltage, high-speed switching in inductive circuits. It features an 8 A maximum collector current and a 350 V collector-emitter breakdown voltage. The device is housed in a TO-220AB package with a thermal resistance optimized for efficient heat dissipation. It operates within a junction temperature range of -55°C to +175°C and meets automotive reliability standards through AEC-Q101 qualification.
Verify the specific suffix (e.g., G) against the datasheet to confirm lead-free status and RoHS compliance. Confirm the manufacturer source, as historical production may involve Motorola or NXP before onsemi acquisition. Ensure the TO-220AB package type matches the design requirements for mounting and thermal management.
Select this component when high-voltage PNP switching with rapid fall times is required. The integrated resistor simplifies drive circuitry compared to standard discrete transistors. Evaluate thermal performance under continuous load conditions to ensure the junction temperature remains within the specified operational limits during peak switching events.
Part of the MJE585x series including MJE5850 and MJE5852 variants. These transistors are engineered specifically for line-operated switch-mode applications where minimizing turn-off time is critical for system efficiency and electromagnetic interference reduction.
MJE5850N: Similar PNP power transistor but rated for 300V instead of 350V. Verify voltage headroom requirements before substitution.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.