MJF6668

Single Bipolar Transistors Overview

The MJF6668 is a PNP silicon planar Darlington power transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 10 A. The device utilizes an isolated overmold package, specifically the TO-220AB (CASE 221D-03) form factor, which allows for direct mounting to heatsinks without requiring insulating washers. Key electrical parameters include a maximum DC current gain suitable for general-purpose amplification and switching applications. The component is designed for high isolation voltage capabilities, recognized at 3500 VRMS, ensuring safety in chassis-mounted configurations.

Single Bipolar Transistors Feature Summary

• Complementary NPN/PNP Darlington pair configuration with the MJF6388
• Electrically isolated plastic overmold package eliminates need for isolating washers
• High DC current gain optimized for amplifier and switching circuits
• UL recognized isolation rating of 3500 VRMS for enhanced safety

Single Bipolar Transistors Applications

• General-purpose power amplifiers requiring isolated mounting surfaces
• Switching applications where chassis isolation is mandatory
• Industrial control systems utilizing complementary Darlington pairs

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and revision level against the latest manufacturer datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary. Ensure thermal management solutions account for the TO-220AB package dimensions and power dissipation characteristics under actual operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP Darlington transistor with high current capability and electrical isolation from the heatsink is required. It serves as the complementary counterpart to the MJF6388 NPN device. Consider the TO-220AB package for through-hole mounting and verify that the 100 V collector-emitter voltage meets the circuit's peak operational demands.

Single Bipolar Transistors Part Context

The MJF6668 belongs to the family of complementary silicon power Darlingtons designed for robust performance in demanding environments. These devices are engineered to replace older standards like the TIP107 while offering superior isolation benefits. The integrated isolation simplifies mechanical assembly and reduces system cost by removing the need for separate insulating hardware between the transistor and the cooling infrastructure.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: CJF6668.