MJH11022

Single Bipolar Transistors Overview

The MJH11022 is an NPN Darlington silicon power transistor designed for general-purpose amplification, low-frequency switching, and motor control applications. It features a collector-emitter sustaining voltage of 250 Vdc minimum and supports a continuous collector current of 15 Adc with peak currents up to 30 Adc. The device offers a high DC current gain (hFE) of at least 400 at 10 Adc and dissipates up to 150 W at 25°C case temperature. Available in TO-218 and TO-247 through-hole packages, it operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• High DC Current Gain: Minimum hFE of 400 at 10 Adc ensures efficient drive requirements.
• Robust Voltage Rating: Collector-Emitter Sustaining Voltage (VCEO(sus)) rated at 250 Vdc minimum.
• Low Saturation Voltage: Typical VCE(sat) of 1.2 V at 5.0 A and 1.8 V at 10 A for reduced conduction losses.
• Monolithic Construction: Single-chip design provides reliability and thermal stability.

Single Bipolar Transistors Applications

• General purpose amplifiers
• Low frequency switching circuits
• Motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific package type required, as the MJH11022 is available in both TO-218 and TO-247 configurations. Confirm that the ordering suffix 'G' indicates a lead-free package compliant with environmental standards. Ensure the selected variant matches the pinout and mechanical dimensions needed for the target PCB or heatsink assembly.

Single Bipolar Transistors Selection Notes

Select this component when high voltage handling (250 V) and substantial current capacity (15 A) are required in a single package. The high current gain simplifies base drive circuitry compared to standard bipolar transistors. Consider the thermal resistance and safe operating area curves for designs involving inductive loads or high duty cycles to ensure reliable operation under worst-case conditions.

Single Bipolar Transistors Part Context

The MJH11022 belongs to the MJH110xx complementary Darlington series from onsemi, which includes PNP counterparts like the MJH11021. This family is engineered for robust performance in power electronics, offering matched characteristics for push-pull or bridge configurations. The devices utilize monolithic construction to enhance reliability and simplify system design for medium-to-high power applications.

Single Bipolar Transistors Replacement Considerations

Direct replacement options include the MJH11022G, which denotes the lead-free version of the same electrical specifications. Verify compatibility regarding package style (TO-218 vs. TO-247) and pin configuration before substitution.

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the MJH11022?

The minimum DC current gain (hFE) is 400 when tested at a collector current of 10 Adc and VCE of 5.0 Vdc.

How does the MJH11022 handle inductive load turn-off?

The device specifies a Reverse Bias Safe Operating Area (RBSOA) to define safe voltage-current limits during reverse-biased turn-off with inductive loads, verified under clamped conditions without avalanche mode.

What is the maximum total device dissipation?

The maximum total device dissipation is 150 W at a case temperature of 25°C, with a derating factor of 1.2 W/°C above this temperature.