MMBD301LT3G

RF Diode Overview

The MMBD301LT3G is a single silicon Schottky barrier diode manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a maximum repetitive peak reverse voltage of 30V and a DC forward current rating of 200mA. The device has a low forward voltage drop of approximately 450mV at 10mA and a maximum reverse leakage current of 1μA at 30V. It operates within a junction temperature range of -65°C to +150°C and dissipates up to 200mW of power. The component is designed for high-efficiency UHF and VHF detector applications.

RF Diode Feature Summary

• Schottky barrier construction enables fast switching speeds suitable for RF detection
• Low forward voltage drop improves circuit efficiency
• SOT-23 surface-mount package facilitates automated assembly

RF Diode Applications

• High-efficiency UHF and VHF detector circuits
• Fast switching RF applications
• Digital signal processing interfaces

RF Diode Procurement Notes

Verify the specific ordering suffix LT3G to confirm the tape-and-reel packaging configuration with a standard quantity per reel. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the datasheet revision date to confirm parameter stability before finalizing procurement specifications.

RF Diode Selection Notes

Select this component when a compact surface-mount Schottky diode is required for low-voltage rectification or detection. Compare the 30V reverse voltage rating against peak circuit voltages to ensure adequate margin. Consider the SOT-23 footprint constraints and thermal dissipation capabilities relative to the expected forward current load in the design.

RF Diode Part Context

This part belongs to the MBD301 family of silicon hot-carrier diodes from onsemi. The family includes variants such as MBD301G in TO-92 and MMBD301LT1G in different reel configurations. These devices share identical electrical characteristics but differ in physical packaging to suit through-hole or surface-mount manufacturing processes.

RF Diode Replacement Considerations

Direct substitutes include other MMBD301LT3G units from onsemi or equivalent Schottky diodes in SOT-23 packages with matching 30V reverse voltage and similar forward current ratings. Verify pinout compatibility and thermal resistance parameters when considering alternative manufacturers.