MMBD352LT1

RF Diode Overview

The MMBD352LT1 is a dual hot carrier mixer diode manufactured by onsemi. Designed primarily for UHF mixer applications, the device is also suitable for detector and ultra-fast switching circuits. Key electrical characteristics include very low capacitance of less than 1.0 pF at zero volts and a low forward voltage of 0.5 V typical at an IF current of 10 mA. The component is available in lead-free packages.

RF Diode Feature Summary

• Optimized for UHF mixer applications
• Suitable for detector and ultra-fast switching circuits
• Very low capacitance below 1.0 pF at zero bias
• Low forward voltage drop of 0.5 V typical

RF Diode Applications

• UHF mixer circuits
• Detector circuits
• Ultra-fast switching applications

RF Diode Procurement Notes

Verify the specific package outline and tape-and-reel quantity against the official datasheet before ordering. Confirm that the lead-free designation aligns with environmental compliance requirements for the target assembly process. Ensure the supplier provides documentation matching the MMBD352LT1 part number to avoid substitution errors.

RF Diode Selection Notes

Select this component when low capacitance and fast switching are critical for UHF frequency operation. Compare the 0.5 V forward voltage specification against circuit loss tolerances. Verify that the dual configuration fits the board space constraints compared to single-diode alternatives.

RF Diode Part Context

This part belongs to the hot carrier diode family from onsemi, historically associated with Motorola semiconductor lines. It serves as a specialized RF component distinct from standard signal or power diodes. The dual configuration allows for balanced mixer topologies within a compact footprint.

RF Diode Replacement Considerations

Check for MMBD352LT1G as a potential equivalent variant with identical functionality but potentially updated packaging or compliance markings. Verify pinout compatibility before substituting with other dual diode arrays.