MMBD770T1G

RF Diode Overview

The MMBD770T1G is a single Schottky barrier rectifier manufactured by onsemi, designed for surface-mount applications. It utilizes silicon technology and is housed in an SC-70-3 (SOT-323) package. The device supports a maximum repetitive peak reverse voltage of 70 V and handles a forward current of 200 mA. Key electrical characteristics include a maximum forward voltage of 700 mV and a low reverse leakage current of 9 nA. It withstands a forward surge current of 1 A and dissipates up to 120 mW of power. The component operates within a temperature range of -55°C to +125°C and holds AEC-Q100 qualification.

RF Diode Feature Summary

• Single diode configuration optimized for compact surface-mount layouts
• Low forward voltage drop enhances switching efficiency
• Minimal reverse leakage current reduces standby power loss
• Automotive-grade reliability through AEC-Q100 certification

RF Diode Applications

• High-frequency signal rectification in communication circuits
• Voltage clamping and protection in sensitive electronic systems
• DC-DC converter output rectification in portable devices

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm packaging type, as variations exist between reel, cut tape, and MouseReel formats. Confirm RoHS compliance status and material declaration details directly from the manufacturer's documentation before finalizing procurement specifications. Ensure the selected variant matches the required moisture sensitivity level for the intended assembly process.

RF Diode Selection Notes

Select this component when space constraints require an SC-70-3 footprint with Schottky performance characteristics. Compare the 200 mA forward current rating against circuit load requirements to ensure adequate headroom. Evaluate the 700 mV forward voltage against system efficiency targets, noting that lower voltage options may be available in different packages or series if thermal management permits higher currents.

RF Diode Part Context

This part belongs to the MMBD770 family of small-signal Schottky diodes produced by onsemi. It shares core electrical specifications with variants such as the SMMBD770T1G but differs in physical packaging and pinout configuration. The SC-70-3 form factor distinguishes it from dual-diode configurations or larger single-diode packages within the broader product line.

RF Diode Replacement Considerations

Direct functional substitutes include the SMMBD770T1G, which offers identical electrical parameters but utilizes an SC-70-2 package. Verify pin compatibility and thermal dissipation capabilities when swapping between these package types. No other official cross-references are documented; alternative replacements require independent verification of electrical and mechanical parameters.