MMBF4391

MMBF4391

$0.36
  • Description:JFET N-CH 30V SOT23-3
  • Series:-

SKU:16afc98413e7 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 30V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):50 mA @ 20 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:4 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:14pF @ 20V
  • Resistance - RDS(On):30 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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MMBF4391

Overview

The MMBF4391 is an N-channel JFET switch manufactured by onsemi, housed in a SOT-23 surface-mount package. It features a Drain-Gate Voltage of 30 V and a Gate-Source Voltage rating of -30 V. The device operates within a junction temperature range of -55°C to 150°C with a total power dissipation of 350 mW. Key electrical characteristics include a Zero-Gate Voltage Drain Current (IDSS) ranging from 50 mA to 150 mA at VDS = 20 V, and a Drain-Source On Resistance (rDS(on)) of 30 Ω at ID = 1.0 mA. The input capacitance (Ciss) is 14 pF.

Feature Summary

  • Designed for low-level analog switching applications
  • Suitable for sample and hold circuits
  • Compatible with chopper stabilized amplifier designs

Applications

  • Low level analog switching
  • Sample and hold circuits
  • Chopper stabilized amplifiers

Procurement Notes

Verify the specific part number suffix against official onsemi documentation to ensure correct packing method and top marking. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure sourcing channels are authorized distributors to guarantee genuine parts and full traceability. Validate all operating parameters for your specific application conditions before implementation.

Selection Notes

Select this component when high drain current capability is required compared to standard JFETs. The MMBF4391 offers a higher IDSS range than the MMBF4392 or MMBF4393 variants. Consider the 30 Ω on-resistance and 14 pF input capacitance for signal integrity requirements. Verify thermal management capabilities given the 357 °C/W junction-to-ambient resistance.

Part Context

This device belongs to the MMBF439x series of N-channel switches. It is sourced from Process 51 and shares characteristics with the J111 device. The series includes MMBF4392 and MMBF4393, which offer lower IDSS ranges. The product line is now managed by onsemi following the integration of Fairchild Semiconductor.

Replacement Considerations

MMBF4392LT1G

FAQ

What is the Zero-Gate Voltage Drain Current range for the MMBF4391?

The IDSS ranges from 50 mA to 150 mA when measured at VDS = 20 V and VGS = 0.

Are the source and drain terminals interchangeable?

Yes, the datasheet notes that the source and drain leads are interchangeable.

What is the maximum Gate-Source Breakdown Voltage?

The V(BR)GSS is specified as -30 V with a gate current of 1.0 μA and VDS = 0.

MMBF4391MMBF4391
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