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The MMBF4391LT1G is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a Drain-Source Voltage (VDS) of 30 Vdc and a Gate-Source Breakdown Voltage (V(BR)GSS) of 30 Vdc. The Zero-Gate-Voltage Drain Current (IDSS) ranges from 50 mA to 150 mA at VDS = 15 Vdc. The device operates within a junction temperature range of -55°C to +150°C, with a total device dissipation of 225 mW on an FR-5 board at 25°C ambient. Input capacitance is 14 pF at 1 MHz.
Verify the specific ordering suffix 'G' indicates a Pb-Free package configuration as documented in the manufacturer's ordering information. Confirm that the component marking corresponds to the designated code '6J' for this specific part number variant. Ensure compliance with the stated environmental declarations regarding halogen-free status prior to integration into final assemblies.
Select this component when an N-channel JFET with a minimum IDSS of 50 mA is required. The 30 V voltage rating suits low-voltage signal processing tasks. Consider the thermal resistance of 556 °C/W for heat dissipation planning in dense PCB layouts. Verify that the 14 pF input capacitance meets the bandwidth requirements of the target application circuit.
This device belongs to the MMBF4391L/4392L/4393L family of N-channel JFETs. While sharing identical maximum ratings and packaging, the series distinguishes parts based on their Zero-Gate-Voltage Drain Current (IDSS) specifications. The MMBF4391L specifically targets higher current ranges compared to its siblings.
Public confirmed substitute part numbers are not available in the provided documentation.