MMBF4392LT1G

$0.31

Description：JFET N-CH 30V SOT23-3
Series：-

SKU:0290e93f5843 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 30V SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：30 V
Current - Drain (Idss) @ Vds (Vgs=0)：25 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：2 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds：14pF @ 15V
Resistance - RDS(On)：60 Ohms
Power - Max：225 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

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MMBF4392LT1G

Overview

The MMBF4392LT1G is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It operates with a Drain-Source Voltage (VDS) of 30 Vdc and a Gate-Source Voltage (VGS) of 30 Vdc. The device features an Off-State Drain Current (IDSS) range of 25 to 75 mAdc at VDS = 15 Vdc and VGS = 0. Static Drain-Source On-Resistance (rDS(on)) is specified at 60 Ohms for ID = 1.0 mAdc. Total Device Dissipation (PD) is 225 mW, with a thermal resistance junction-to-ambient of 556 °C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Single N-channel JFET configuration in a surface-mount SOT-23 package
Pb-Free, Halogen Free/BFR Free, and RoHS compliant construction
Designed for general purpose linear and switching applications

Applications

General purpose linear circuits
Switching applications
Low voltage multi epitaxial planar technology implementations

Procurement Notes

Verify the specific ordering suffix 'LT1G' against official onsemi documentation to confirm packaging details and shipping quantities. Ensure compatibility with standard SOT-23 footprint requirements during PCB layout. Confirm that the component meets all applicable environmental compliance standards required for the target assembly process.

Selection Notes

Select this component based on its specific IDSS range of 25 to 75 mA and rDS(on) of 60 Ohms. Consider the 30 Vdc voltage ratings for circuit protection needs. Evaluate the thermal characteristics, specifically the 225 mW dissipation limit, to ensure adequate heat management within the intended operating environment and ambient temperature conditions.

Part Context

This part belongs to the MMBF4391L, MMBF4392L, and MMBF4393L series of JFET switching transistors. While sharing similar voltage ratings and package types, each variant is distinguished by unique Zero-Gate-Voltage Drain Current (IDSS) specifications. The MMBF4392LT1G occupies the middle tier of current conduction capabilities within this family.