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The MMBF4393LT1G is a single N-channel JFET switching transistor manufactured by onsemi. It features a maximum Drain-Source Voltage (VDS) of 30 Vdc and a Gate-Source Breakdown Voltage (V(BR)GSS) of 30 Vdc. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 225 mW. Electrical characteristics include an Off-State Drain Current (IDSS) ranging from 5 mA to 30 mA at VGS = 0, and a Static Drain-Source On-Resistance (rDS(on)) of up to 100 Ohms. Input capacitance is specified at 14 pF.
Verify the specific ordering suffix 'G' indicates Pb-Free packaging when sourcing. Confirm package type SOT-23 matches design constraints. Check datasheet revision history for updates. Ensure application voltage does not exceed 30 Vdc limits. Validate thermal resistance requirements against system dissipation needs.
Select based on required IDSS range between 5 mA and 30 mA. Consider rDS(on) variations relative to current levels. Verify compatibility with SOT-23 footprint. Evaluate thermal performance for high ambient temperatures. Confirm suitability for low-noise signal paths if applicable.
Part of the MMBF4391L, MMBF4392L, and MMBF4393L series. Shares common electrical ratings but differs in zero-gate-voltage drain current specifications. Manufactured by onsemi using silicon technology. Available in surface-mount SOT-23 packages.
MMBF4393LT3G serves as a reel-packaged alternative. Cross-reference MMBF4391LT1G or MMBF4392LT1G only if IDSS ranges align with circuit requirements. Verify pinout compatibility before substitution.
The maximum forward gate current is 50 mAdc.
The Drain-Source On-State Resistance increases as channel temperature rises, as shown in typical characteristic curves.
Yes, devices with the 'S' prefix are AEC-Q101 qualified and PPAP capable for automotive applications.