ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH 30V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：14pF @ 15V
- Resistance - RDS(On)：100 Ohms
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
Download product information
Overview
The MMBF4393LT3G is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It operates with a Drain-Source Voltage (VDS) of 30 Vdc and a Gate-Source Voltage (VGS) of 30 Vdc. The device features an Off-State Drain Current (IDSS) range of 5 mA to 30 mA at VDS = 15 Vdc and VGS = 0. Static Drain-Source On-Resistance (rDS(on)) is specified at 100 Ohms for ID = 1.0 mAdc. Total Device Dissipation (PD) is 225 mW, with a thermal resistance junction-to-ambient of 556 °C/W. Input Capacitance (Ciss) is 14 pF at VDS = 0 Vdc and VGS = -15 Vdc.
Feature Summary
- Designed specifically for analog switching and chopper applications.
- Constructed using silicon technology in a surface-mount SOT-23 package.
- Compliant with RoHS standards and free from lead, halogens, and brominated flame retardants.
Applications
- Analog switches
- Chopper circuits
Procurement Notes
Verify the specific ordering suffix 'LT3G' against official documentation to confirm packaging details such as tape and reel specifications. Ensure that the component meets all applicable automotive or industrial site control requirements if indicated by the 'S' prefix designation in related datasheets. Confirm compliance with current environmental directives before finalizing procurement.
Selection Notes
Select this component based on its specific IDSS range of 5 mA to 30 mA and rDS(on) of 100 Ohms. Consider the 30 Vdc voltage ratings for circuit compatibility. Evaluate the SOT-23 package constraints for thermal dissipation and physical space. Verify that the switching characteristics align with the required signal frequencies and impedance conditions.
Part Context
This part belongs to the MMBF439xL series, which includes variants like MMBF4391L and MMBF4392L. These devices share similar structural designs but differ in parametric ranges, particularly regarding zero-gate-voltage drain current. The series is engineered for low-noise, high-reliability switching performance in compact surface-mount configurations.
Replacement Considerations
MMBF4416 is listed as a direct substitute option.
FAQ
What is the pin configuration for the MMBF4393LT3G?
Pin 1 is the Drain, Pin 2 is the Source, and Pin 3 is the Gate.
What is the maximum forward gate current rating?
The maximum forward gate current (IG(f)) is rated at 50 mAdc.
How does temperature affect the Drain-Source On-State Resistance?
The Drain-Source On-State Resistance increases as the channel temperature rises, as illustrated in the typical characteristics graphs.
