ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET JFET 30V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：JFET
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：15mA
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：30 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Configuration：N-Channel
Download product information
Overview
The MMBF4416LT1G is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for radio frequency applications and operates with a drain-source voltage rating of 15 V. The device features a gate-source breakdown voltage of -30 V and a maximum power dissipation of 225 mW. The drain current at zero gate-source voltage ranges from 5 mA to 15 mA. It is housed in a surface-mount SOT-23 package, suitable for automated assembly processes.
Feature Summary
- Optimized for RF signal processing and amplification circuits
- Compact surface-mount construction for space-constrained designs
- High input impedance characteristics inherent to JFET technology
Applications
- RF amplifier stages
- Low-noise signal conditioning
- Impedance matching networks
Procurement Notes
Verify the specific suffix LT1G against the manufacturer's official datasheet to confirm pinout and electrical tolerances. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with authorized distributors to avoid counterfeit components. Confirm that the SOT-23 footprint matches your PCB design constraints before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage, high-frequency N-channel JFET is required. The 15 V drain-source rating limits its use to low-power RF applications. Compare the 5-15 mA drain current range against circuit biasing requirements. Consider the SOT-23 package size if board real estate is limited. Verify thermal management needs given the 225 mW power dissipation limit.
Part Context
This part belongs to the MMBF4416 series of RF JFETs. It shares the same functional specifications as the MMBF4416A but may differ in packaging or manufacturing lot details. The series is characterized by stable performance in RF environments. It serves as a discrete solution for small-signal amplification where low noise is critical.
Replacement Considerations
The MMBF4416A is a verified equivalent part within the same product family. Both share identical electrical ratings and pin configurations. Verify that any substitute maintains the same SOT-23 footprint and RF performance characteristics.
