MMBF5457LT1

$0.48

Description：JFET N-CH 25V SOT23-3
Series：-

SKU:d5d91b4d44c7 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 25V SOT23-3
Series：-
Mfr：onsemi
Package：Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：25 V
Drain to Source Voltage (Vdss)：25 V
Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：500 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds：7pF @ 15V
Resistance - RDS(On)：-
Power - Max：225 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

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MMBF5457LT1

Overview

The MMBF5457LT1G is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a surface-mount SOT-23-3 package and operates within a temperature range of -55°C to 150°C. The device features a drain-source breakdown voltage of 25V and a maximum power dissipation of 350mW. Key electrical characteristics include a gate-source cutoff voltage of 500mV at 10nA and a typical zero-gate-voltage drain current of 1mA at 15V. The input capacitance is specified as 7pF at 15V, supporting high-frequency signal processing applications.

Feature Summary

N-channel depletion mode operation for analog signal handling
Low input capacitance suitable for high-frequency circuits
Compact SOT-23-3 surface mount packaging

Applications

Analog switch circuits
High-impedance buffer stages
Low-noise preamplifier inputs

Procurement Notes

Verify the exact part number suffix against official manufacturer documentation. The provided model lacks the standard 'G' suffix often associated with lead-free compliance. Confirm RoHS status and specific tape-and-reel quantities directly with authorized distributors or the manufacturer's datasheet to ensure component authenticity and correct ordering specifications.

Selection Notes

Select this component when designing circuits requiring low noise and high input impedance in a small form factor. Ensure the design accommodates the 25V breakdown limit and 350mW thermal constraints. Verify that the required drain current and cutoff voltage parameters align with the specific operational requirements of the target application circuit.

Part Context

This JFET belongs to the MMBF54 series of small-signal field-effect transistors. It serves as a surface-mount alternative to through-hole devices like the 2N5457. The component is designed for general-purpose analog switching and amplification tasks where compact size and stable electrical characteristics are prioritized over high-power handling capabilities.