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The MMBF5457LT1G is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a surface-mount SOT-23-3 package and operates within a temperature range of -55°C to 150°C TJ. The device features a maximum drain-source breakdown voltage of 25 V and a continuous drain current of 1 mA at Vgs=0 and Vds=15 V. Key electrical parameters include a gate-source cutoff voltage of 500 mV at 10 nA, a maximum input capacitance of 7 pF at 15 V, and a maximum power dissipation of 350 mW.
Verify the specific ordering suffix LT1G against official onsemi documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure that the component designation matches the exact part number required for your bill of materials, as variations in suffixes may indicate differences in packaging or environmental certifications. Cross-reference with authorized distributors to validate authenticity and traceability before procurement.
Select this component when designing circuits requiring an N-channel JFET with a 25 V breakdown voltage and low input capacitance. The SOT-23-3 package is ideal for compact PCB layouts. Consider the 350 mW power dissipation limit and the -55°C to 150°C operating temperature range to ensure compatibility with your system's thermal and environmental constraints.
The MMBF5457LT1G belongs to the MMBF54 series of N-channel JFETs from onsemi. This series is designed for general-purpose analog applications, offering consistent performance across the family. The LT1G suffix typically denotes specific packaging and environmental compliance attributes defined by the manufacturer for mass production.
Publicly confirmed substitute part numbers are not available in the provided reference data. Verify cross-references with official manufacturer substitution guides or equivalent specifications from other vendors before implementation.