MMBF5460LT1G

$0.33

Description：JFET P-CH 40V SOT23-3
Series：-

SKU:97f9066b0258 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET P-CH 40V SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Voltage - Breakdown (V(BR)GSS)：40 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：750 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds：7pF @ 15V
Resistance - RDS(On)：-
Power - Max：225 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

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MMBF5460LT1G

Overview

The MMBF5460LT1G is a P-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. It operates within a drain-source voltage range of up to 40 V and supports a continuous drain current of -20 mA. The device features a gate-source cutoff voltage of 2.5 V and a maximum power dissipation of 225 mW. It is housed in a surface-mount SOT-23 package with three pins, designed for operation across a temperature range from -55°C to +150°C.

Feature Summary

P-Channel JFET configuration for general-purpose signal processing
Compact SOT-23 surface-mount packaging for space-constrained designs
Wide operating temperature range suitable for harsh environments

Applications

General-purpose audio amplification circuits
Low-noise pre-amplifier stages
Analog switching applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct tape-and-reel quantities and environmental compliance status. Confirm that the component meets all required electrical specifications for the target application before finalizing procurement orders.

Selection Notes

Select this component for applications requiring a P-Channel JFET with low input impedance characteristics. Ensure the design accommodates the specified 225 mW power dissipation limit and verify that the 40 V breakdown voltage aligns with the circuit's maximum signal swings.

Part Context

This part belongs to the MMBF5460L series of general-purpose JFETs. It serves as a silicon-based discrete transistor solution for analog signal conditioning. The component is distinct from MOSFETs or bipolar transistors due to its field-effect operation and high input impedance properties.