MMBF5461

MMBF5461

  • Description:JFET P-CH 40V SOT23-3
  • Series:-

SKU:63c3019dff77 Category: Brand:

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Product Detailed Parameters

  • Description:JFET P-CH 40V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):2 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
  • Resistance - RDS(On):-
  • Power - Max:225 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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MMBF5461

Overview

The MMBF5461LT1G is a P-Channel General-Purpose Amplifier JFET in a SOT-23 package. It features a Gate-Source Breakdown Voltage of 40 V and a Total Device Dissipation of 225 mW. The device operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a Gate-Source Cut-Off Voltage (VGS(off)) ranging from 1.0 V to 7.5 V, and a Zero-Gate Voltage Drain Current (IDSS) between -2.0 mA and -9.0 mA at VDS = 15 V. Forward Transfer Conductance (gfs) ranges from 1500 μmhos to 5000 μmhos.

Feature Summary

  • Designed for low-level audio and general-purpose applications with high impedance signal sources
  • Sourced from process 89 technology
  • Source and drain terminals are interchangeable

Applications

  • Low level audio amplification
  • General purpose amplifier circuits
  • High impedance signal source interfacing

Procurement Notes

Verify the specific ordering suffix against the official ON Semiconductor website to ensure correct packing method and updated nomenclature following the Fairchild integration. Confirm that the component meets all absolute maximum ratings for your specific operating conditions before finalizing procurement.

Selection Notes

Select this component when a P-Channel JFET with a 40 V breakdown voltage is required for high impedance applications. Consider the specific VGS(off) and IDSS ranges to match circuit biasing requirements. Ensure the thermal resistance and power dissipation limits accommodate the expected ambient temperatures and duty cycles.

Part Context

This device belongs to the MMBF5460/5461/5462 family of P-Channel General-Purpose Amplifiers. It is manufactured by ON Semiconductor, which acquired Fairchild Semiconductor. The part is available in a 3-lead SOT-23 package suitable for surface mount applications.

Replacement Considerations

MMBF5460LT1G

FAQ

Are the source and drain terminals distinct?

No, the source and drain terminals are interchangeable.

What is the maximum junction temperature?

The maximum junction temperature is 150°C.

MMBF5461MMBF5461

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