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The MMBF5461LT1G is a P-Channel General-Purpose Amplifier JFET in a SOT-23 package. It features a Gate-Source Breakdown Voltage of 40 V and a Total Device Dissipation of 225 mW. The device operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a Gate-Source Cut-Off Voltage (VGS(off)) ranging from 1.0 V to 7.5 V, and a Zero-Gate Voltage Drain Current (IDSS) between -2.0 mA and -9.0 mA at VDS = 15 V. Forward Transfer Conductance (gfs) ranges from 1500 μmhos to 5000 μmhos.
Verify the specific ordering suffix against the official ON Semiconductor website to ensure correct packing method and updated nomenclature following the Fairchild integration. Confirm that the component meets all absolute maximum ratings for your specific operating conditions before finalizing procurement.
Select this component when a P-Channel JFET with a 40 V breakdown voltage is required for high impedance applications. Consider the specific VGS(off) and IDSS ranges to match circuit biasing requirements. Ensure the thermal resistance and power dissipation limits accommodate the expected ambient temperatures and duty cycles.
This device belongs to the MMBF5460/5461/5462 family of P-Channel General-Purpose Amplifiers. It is manufactured by ON Semiconductor, which acquired Fairchild Semiconductor. The part is available in a 3-lead SOT-23 package suitable for surface mount applications.
MMBF5460LT1G
No, the source and drain terminals are interchangeable.
The maximum junction temperature is 150°C.