ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH 25V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：300 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
Download product information
Overview
The MMBF5484LT1G is an N-channel RF amplifier and analog switch manufactured by onsemi, housed in a compact SOT-23 surface-mount package. It utilizes the Process 50 technology to achieve low on-resistance characteristics suitable for signal routing applications. The device features a drain-source breakdown voltage of -25V and a gate-source cutoff voltage range of -0.3V to -3.0V at VDS=15V. Key electrical parameters include a maximum forward gate current of 10mA and a zero-gate voltage drain current between 4.0mA and 5.0mA under standard test conditions.
Feature Summary
- Designed as an N-channel RF amplifier with interchangeable source and drain terminals within the SOT-23 package configuration.
- Utilizes Process 50 technology to provide low on-resistance performance for efficient analog switching operations.
- Features defined gate-source cutoff voltage ranges to ensure precise control over signal conduction states.
Applications
- Low on-resistance analog switches
- Electronic signal routing systems
- RF amplifier circuits
Procurement Notes
Verify the specific suffix LT1G against official onsemi documentation to confirm packaging and compliance details. Ensure the component matches the required Process 50 specifications for your design. Cross-reference absolute maximum ratings with your system's operating limits to prevent damage. Confirm thermal resistance values align with your PCB layout constraints.
Selection Notes
Select this component when low on-resistance analog switching is required in a small form factor. The interchangeable source-drain capability simplifies PCB layout for bidirectional signal paths. Verify that the -25V breakdown voltage meets the peak voltage requirements of the application circuit. Consider the thermal resistance of 556°C/W for heat dissipation planning in enclosed environments.
Part Context
This part belongs to the MMBF5484/5485/5486 family of N-channel RF amplifiers from onsemi. These devices share similar Process 50 technology and SOT-23 packaging but differ in their specific gate-source cutoff voltage thresholds. The family is designed for general-purpose analog switching where low distortion and fast switching are beneficial.
Replacement Considerations
MMBF5485LT1G and MMBF5486LT1G are direct substitutes within the same family, differing primarily in gate-source cutoff voltage ranges. Verify that the alternative part's specific VGS(off) parameters match the control logic levels of the target application before substitution.
