MMBFJ110

Overview

The MMBFJ110 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain-source breakdown voltage of 25 V and a continuous drain current of 10 mA at Vgs=0. The device has a maximum power dissipation of 460 mW and operates within a temperature range of -55°C to +150°C junction temperature. It is housed in a surface-mount SOT-23-3 package.

Feature Summary

• N-channel JFET configuration for signal processing
• High breakdown voltage capability up to 25 V
• Low noise performance suitable for sensitive circuits
• Compact SOT-23-3 surface mount packaging

Applications

• Low-noise amplifier stages
• Impedance conversion circuits
• Analog switches and choppers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as these details are subject to change and vary by region.

Selection Notes

Select this component for applications requiring low-noise amplification or high-impedance buffering. Ensure the circuit design accommodates the 25 V breakdown limit and 460 mW power dissipation. Consider the SOT-23-3 footprint constraints during PCB layout. Verify thermal management requirements for operation near the 150°C maximum junction temperature.

Part Context

This part belongs to the MMBFJ series of small-signal JFETs from onsemi. These devices are designed for general-purpose analog applications where low noise and high input impedance are critical. The series includes various pin-compatible options with different current and voltage ratings.

Replacement Considerations

Check for direct pin-to-pin replacements such as the MMBFJ112, ensuring that the lower Idss and Pd ratings of the substitute meet the specific circuit requirements. Verify electrical parameter compatibility before substitution.