MMBFJ111

$0.44

Description：JFET N-CH 35V SOT23-3
Series：-

SKU:657688cd9b13 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 35V SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：35 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：20 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：3 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：30 Ohms
Power - Max：350 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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MMBFJ111

Overview

The MMBFJ111 is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a surface-mount SOT-23-3 package and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a maximum power dissipation of 350 mW, a gate-source breakdown voltage of 35 V, and an on-resistance of 30 Ohms. The device supports a drain current of 20 mA at 15 V with a gate-source cutoff voltage of 3 V at 1 µA.

Feature Summary

Single N-channel JFET configuration for discrete switching applications
Surface-mount SOT-23-3 packaging for compact circuit integration
Wide operating temperature range suitable for harsh environments

Applications

Low-level analog signal switching
Sample and hold circuits
Chopper-stabilized amplifiers

Procurement Notes

Verify the specific suffix or marking code against the official datasheet to confirm the exact parameter bin, as variations may exist within the same base part number. Ensure the ordering quantity matches the manufacturer's standard reel or cut-tape requirements. Confirm RoHS compliance status for environmental regulations. Cross-reference the component marking with the latest product change notification to avoid obsolete stock.

Selection Notes

Select this component when a low on-resistance of 30 Ohms is required for N-channel switching. Compare Idss and Vgs(off) tolerances against circuit requirements. Consider the SOT-23-3 footprint constraints during PCB layout. Evaluate thermal management needs given the 350 mW power dissipation limit. Verify compatibility with existing control logic levels for gate drive voltages.

Part Context

This device belongs to the MMBFJ1xx series of small-signal JFETs from onsemi. It shares the SOT-23-3 form factor with variants like the MMBFJ112 and MMBFJ113 but differs in specific electrical characteristics such as on-resistance and cutoff voltage. It serves as a discrete alternative to integrated analog switches in precision signal path applications.