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Product Detailed Parameters
- Description：JFET N-CH 35V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：35 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：100 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBFJ113 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a surface-mount SOT-23-3 package and rated for a maximum power dissipation of 350 mW. The device features a gate-source breakdown voltage of 35 V and a typical drain current of 2 mA at 15 V with zero gate-source voltage. Its off-state cutoff voltage is specified as 500 mV at 1 µA, while the on-resistance is 100 Ohms. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- N-channel JFET configuration designed for low-level analog switching applications
- Surface-mount SOT-23-3 packaging for compact circuit integration
- High input impedance characteristics suitable for precision signal handling
Applications
- Low-level analog switches
- Sample-and-hold circuits
- Chopper-stabilized amplifiers
Procurement Notes
Verify the specific datasheet version and marking layout against official onsemi documentation before finalizing design-in decisions. Confirm that the SOT-23-3 footprint matches the target PCB design requirements. Ensure compliance with RoHS and REACH regulations as stated in the manufacturer's material declaration. Cross-reference part numbers to distinguish between tape-and-reel and cut-tape variants if specific packaging is required for assembly processes.
Selection Notes
Select this component when a small-form-factor N-channel JFET is required for high-impedance analog paths. The 35 V breakdown voltage provides adequate headroom for many low-voltage signal chains. Compare Idss and VGS(off) specifications against circuit tolerance requirements to ensure proper biasing. Consider the thermal limits of the SOT-23 package for power dissipation constraints in dense layouts.
Part Context
The MMBFJ113 belongs to the MMBFJ1xx series of surface-mount JFETs from onsemi. This series includes variants such as the MMBFJ111 and MMBFJ112, which share similar packaging but differ in electrical parameters like drain current and on-resistance. These devices are part of onsemi's discrete semiconductor portfolio focused on general-purpose analog switching and amplification.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Designers should consult official cross-reference tools or contact onsemi sales for verified alternatives.
