MMBFJ175

$0.42

Description：JFET P-CH 30V SOT23-3
Series：-

SKU:f03ba6912e51 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET P-CH 30V SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：125 Ohms
Power - Max：225 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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MMBFJ175

Overview

The MMBFJ175 is a P-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. It features a Gate-Source Breakdown Voltage of 30 V and a Zero-Gate Voltage Drain Current range of -2.0 mA to -25.0 mA at VDS = -15 V. The device operates within a junction temperature range of -55 °C to +150 °C. Available in SOT-23 (TO-236) and TO-92 packages, it supports a maximum total device dissipation of 225 mW in the surface-mount configuration.

Feature Summary

Designed for low-level analog switching applications
Suitable for sample-and-hold circuits
Compatible with chopper-stabilized amplifiers

Applications

Low-level analog switching
Sample-and-hold circuits
Chopper-stabilized amplifiers

Procurement Notes

Verify the specific package variant required, as the datasheet lists both TO-92 and SOT-23 configurations under the J176/MMBFJ176 designation. Confirm that the ordering suffix matches the desired packing method, such as tape and reel or fan-fold. Ensure the component meets RoHS compliance standards if applicable to the assembly process. Cross-reference the marking diagram to validate the physical unit received against the ordered part number.

Selection Notes

Select this component when a P-Channel JFET is required for precision analog signal routing. The interchangeable source and drain terminals provide layout flexibility. Consider the thermal resistance values when designing for high ambient temperatures. Verify that the gate-source cutoff voltage specifications align with the control logic levels used in the target circuit design.

Part Context

This device belongs to the J176 family of P-Channel JFETs produced by onsemi. It is sourced from process 88, indicating a specific manufacturing lineage. The product line includes variants available in through-hole and surface-mount packages, catering to diverse PCB integration requirements for discrete semiconductor components.