ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET P-CH 30V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：11pF @ 10V (VGS)
- Resistance - RDS(On)：125 Ohms
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
Download product information
Overview
The MMBFJ175LT1G is a single P-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a gate-source breakdown voltage of 30 V and supports a drain-source current range of 7 mA to 60 mA at zero gate-source voltage. Designed for general-purpose applications, it operates within a temperature range suitable for standard electronic environments.
Feature Summary
- Single P-Channel JFET configuration
- Silicon semiconductor technology
- SOT-23-3 surface-mount packaging
Applications
- General-purpose amplification circuits
- Low-noise signal processing stages
- Constant current source implementations
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure correct tape-and-reel or cut-tape availability. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the part number with authorized distributor catalogs to validate current production status and lead time requirements before finalizing procurement plans.
Selection Notes
Select this component when a P-Channel JFET with a 30 V gate-source rating is required in a compact SOT-23-3 footprint. Ensure the application demands a drain-source current capability within the 7 mA to 60 mA range specified for zero gate bias. Verify that the thermal management and power dissipation limits align with the system's operational constraints.
Part Context
This component belongs to the MMBFJ175L series of small-signal JFETs from onsemi. It is designed for low-power, high-impedance applications requiring stable current characteristics. The SOT-23-3 package allows for automated surface-mount assembly, making it suitable for space-constrained consumer and industrial electronics designs.
Replacement Considerations
Consult official substitution guides for equivalent P-Channel JFETs in SOT-23 packages. Verify pinout compatibility and electrical parameter overlaps before replacing the original component in existing circuit layouts.
