MMBFJ175LT3G

Overview

The MMBFJ175LT3G is a P-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 30V. It operates within a temperature range from -55°C to 150°C. The component is RoHS compliant and halide-free. Standard packaging options include Reel, Cut Tape, and MouseReel formats.

Feature Summary

• P-Channel JFET configuration for signal processing
• Silicon-based construction for reliability
• SOT-23-3 compact surface-mount footprint

Applications

• Low-noise amplifier circuits
• Analog switch applications
• Impedance matching networks

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives if required by the target application environment. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement orders.

Selection Notes

Select this component when a P-Channel JFET with a 30V breakdown rating is required in a small SOT-23-3 package. Consider the -55°C to 150°C operating temperature range for environmental suitability. Evaluate the specific gate-source and drain-source voltage limits against circuit requirements to ensure safe operation under all expected load conditions.

Part Context

This component belongs to the MMBFJ175L series of JFETs produced by onsemi. It is categorized under discrete semiconductor transistors. The product line focuses on providing reliable junction field-effect solutions for analog signal handling tasks in consumer and industrial electronics.

Replacement Considerations

Consult official substitution guides for verified equivalents. Generic replacements may differ in electrical characteristics or pinout configurations.