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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：1.5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：300 Ohms
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBFJ177 is a P-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. It is designed for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. The device utilizes Silicon technology and is available in the SOT-23 (TO-236) surface-mount package. Key electrical characteristics include a Gate-Source Breakdown Voltage of 30 V and a Zero-Gate Voltage Drain Current range of -2.0 mA to -25.0 mA at VDS = -15 V. The Drain-Source On Resistance is specified at a maximum of 250 Ohms under standard test conditions.
Feature Summary
- Designed specifically for low-level analog signal switching applications
- Suitable for integration into sample-and-hold circuit architectures
- Optimized for use within chopper-stabilized amplifier configurations
Applications
- Low-level analog switching
- Sample-and-hold circuits
- Chopper-stabilized amplifiers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and marking specifications. Confirm that the component status aligns with project requirements, as availability may vary. Ensure compliance with relevant environmental directives such as RoHS before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring precise low-level analog switching capabilities. Consider the specified breakdown voltage limits and thermal dissipation characteristics relative to the operating environment. Evaluate the drain current ranges to ensure compatibility with the intended signal levels and load requirements.
Part Context
This part belongs to the J175/J176 family of P-Channel Switches produced by onsemi. It represents a silicon-based discrete semiconductor solution intended for general-purpose analog signal control tasks. The device is distinct from power MOSFETs or high-voltage transistors, focusing instead on precision switching performance in small-signal environments.
Replacement Considerations
The datasheet lists the J176 as a related device within the same product family. Verify pinout compatibility and electrical parameter overlaps before substituting.
