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Product Detailed Parameters
- Description：SS P-CHAN 25V SOT23
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT)
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MMBFJ177LT1G is a P-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. It operates within a drain-source voltage range of up to 30V and dissipates a maximum power of 225 mW. The device features a gate-source cutoff voltage of 800 mV at 10 nA and an input capacitance of 11 pF at 10 V. It is available in a surface-mount SOT-23-3 package and supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Designed for low-noise chopper applications utilizing depletion-mode operation.
- Provides high input impedance suitable for precision analog signal processing.
- Engineered for stable performance across extended industrial temperature ranges.
Applications
- Low-noise amplifier circuits
- Impedance conversion stages
- Analog switch implementations
Procurement Notes
Verify the specific suffix against official documentation, as the provided model lacks the standard 'G' RoHS-compliant designation found in current active listings. Confirm availability status directly with the manufacturer or authorized distributors, as older variants may be subject to discontinuation notices or limited stock conditions.
Selection Notes
Select this component when designing circuits requiring P-channel JFET characteristics in a compact SOT-23 form factor. Ensure the design accommodates the specified 30V breakdown voltage and 225 mW power dissipation limits. Verify thermal management requirements for the intended operating environment to maintain reliability within the stated temperature range.
Part Context
This part belongs to the MMBFJ177L series of single P-Channel JFETs. It serves as a silicon-based discrete semiconductor solution for analog switching and amplification tasks. The component is distinct from N-channel variants and other polarity options within the broader JFET product family.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides for potential alternatives such as MMBFJ177LT1G if functional equivalence is required.
