MMBFJ177LT1G

$0.29

Description：JFET P-CH 30V SOT23-3
Series：-

SKU:ab93f08e6578 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET P-CH 30V SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：1.5 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds：11pF @ 10V (VGS)
Resistance - RDS(On)：300 Ohms
Power - Max：225 mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

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MMBFJ177LT1G

Overview

The MMBFJ177LT1G is a P-channel depletion JFET manufactured by onsemi in an SOT-23 package. It features a gate-source breakdown voltage of 30 Vdc and a zero-gate-voltage drain current range of -1.5 mA to -20 mA at -15 Vdc. The device has a maximum drain-source on resistance of 300 Ohms and an input capacitance of 11 pF. It operates within a junction temperature range of -55°C to +150°C with a total device dissipation of 225 mW.

Feature Summary

Designed specifically for chopper applications utilizing P-channel depletion technology.
Qualified for automotive and other applications requiring unique site and control change requirements under AEC-Q101 standards.

Applications

Chopper circuits
Analog switching
Signal modulation

Procurement Notes

Verify the component matches the specific ordering suffix LT1G, which indicates a lead-free and RoHS-compliant package. Confirm that the application requires the specified P-channel configuration and the associated electrical characteristics provided in the datasheet before finalizing procurement.

Selection Notes

Select this component when a P-channel JFET is required for low-noise analog switching or chopper stabilization circuits. Ensure the design accommodates the specified drain current range and the thermal constraints defined by the 225 mW power dissipation limit in the target environment.

Part Context

This part belongs to the MMBFJ177L series of single NPN/PNP transistors and JFETs. It is a surface-mount device intended for general-purpose electronic applications where small form factor and reliable switching performance are necessary.