MMBFJ201_G

MMBFJ201_G

  • Description:JFET N-CH 40V SOT23-3
  • Series:-

SKU:2aa2c55ab841 Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 40V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):200 µA @ 20 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:300 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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MMBFJ201_G

Overview

The MMBFJ201_G is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It serves as a general-purpose amplifier designed for low-level audio and high-impedance signal source applications. The device utilizes Process 52 technology to ensure consistent performance characteristics across production batches.

Feature Summary

  • N-Channel JFET configuration optimized for voltage-controlled amplification
  • Designed for high-impedance signal source interfacing
  • Suitable for low-noise audio pre-amplification stages

Applications

  • Low-level audio amplification circuits
  • High-impedance sensor interface front-ends
  • General-purpose analog signal processing

Procurement Notes

Verify the specific suffix _G against official onsemi documentation to confirm halide-free and lead-free compliance status. Ensure the component matches the Process 52 sourcing specification required for the intended application design parameters.

Selection Notes

Select this component when designing circuits requiring high input impedance and low noise performance for audio or precision analog signals. Confirm that the N-Channel topology aligns with the system's biasing requirements and signal path architecture.

Part Context

This part belongs to the JFET category, which provides distinct advantages over MOSFETs in specific analog applications due to superior low-noise characteristics and high input impedance. It is commonly used in high-fidelity audio equipment and precision measurement interfaces where signal integrity is critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Verify compatibility with equivalents such as 2N5457 or TIS73 only through independent electrical parameter cross-referencing.

MMBFJ201_GMMBFJ201_G

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