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Product Detailed Parameters
- Description：JFET N-CH 40V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：900 µA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBFJ202 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi, designed for general-purpose applications. It utilizes a surface-mount SOT-23-3 package and operates within a temperature range of -55°C to 150°C TJ. Key electrical parameters include a drain-source voltage (Vdss) of 40 V and a gate-source breakdown voltage (V(BR)GSS) of 40 V. The device supports a maximum power dissipation of 350 mW. At a drain-source voltage of 20 V, the zero-gate-voltage drain current (Idss) is specified at 900 µA. The gate-source cutoff voltage (VGS off) is 800 mV at 10 nA.
Feature Summary
- N-channel JFET configuration suitable for low-noise amplification and impedance conversion tasks.
- Surface-mount SOT-23-3 packaging facilitates automated assembly and compact circuit board layouts.
- Operates across an extended junction temperature range from -55°C to 150°C.
Applications
- Low-noise amplifier circuits
- Impedance conversion stages
- Analog switching and chopper applications
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and material composition declarations prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate that the specific order quantity matches the required reel or cut tape specifications for production line compatibility.
Selection Notes
Select this component when an N-channel JFET with a 40 V rating is required in a small surface-mount footprint. Consider the 350 mW power dissipation limit and Idss characteristics relative to the target circuit's biasing needs. Verify thermal management capabilities for the intended operating environment given the SOT-23-3 package constraints.
Part Context
The MMBFJ202 belongs to the MMBFJ2 series of N-channel JFETs produced by onsemi. This series provides discrete field-effect transistors optimized for analog signal processing. The component is part of onsemi's broader portfolio of discrete semiconductors used in consumer, industrial, and automotive electronics.
Replacement Considerations
Consult official datasheets for cross-reference data. Potential substitutes may include other N-channel JFETs in SOT-23 packages with compatible Vdss and Idss ratings, such as the MMBFJ112, subject to verification of pinout and electrical parameter alignment.
