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Product Detailed Parameters
- Description：SS N-CHAN 25V SOT23
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT)
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The MMBFJ309LT1G is an N-channel JFET transistor designed for VHF and UHF amplifier applications. It features a SOT-23 (TO-236) surface-mount package with interchangeable drain and source terminals. Key electrical parameters include a Drain-Source Voltage of 25 Vdc, Gate-Source Voltage of 25 Vdc, and Gate Current of 10 mAdc. The Zero-Gate-Voltage Drain Current ranges from 12 to 30 mAdc at VDS = 10 Vdc. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Interchangeable drain and source terminals simplify circuit layout
- Designed specifically for VHF/UHF amplifier applications
- Pb-free, Halogen-free/BFR-free, and RoHS compliant construction
Applications
- VHF amplifiers
- UHF amplifiers
- RF small signal circuits
Procurement Notes
Verify the specific ordering suffix 'G' indicates Pb-free packaging when sourcing. Confirm that the component meets AEC-Q101 qualification requirements if the application demands automotive-grade reliability or unique site control changes. Ensure the package style matches the required footprint for the target PCB design.
Selection Notes
Select this component for designs requiring low noise and high gain in the VHF/UHF bands. Consider the interchangeable drain and source feature to reduce board space constraints. Verify that the maximum ratings, particularly the 25 Vdc voltage limits and thermal dissipation capabilities, align with the intended operating conditions.
Part Context
This part belongs to the MMBFJ309L series manufactured by onsemi. It is a silicon N-channel Junction Field Effect Transistor housed in a compact SOT-23 package. The device is optimized for RF applications where low input capacitance and high transconductance are critical for performance.
Replacement Considerations
MMBFJ310LT1G
FAQ
Are the drain and source terminals interchangeable?
Yes, the datasheet specifies that the drain and source are interchangeable.
What is the maximum junction temperature?
The maximum junction temperature is +150°C.
Is this component suitable for automotive applications?
Yes, devices with the 'S' prefix are AEC-Q101 qualified and PPAP capable for automotive use.
