MMBFJ310LT1

$0.53

Description：RF MOSFET N-CH JFET 10V SOT23
Series：*

SKU:5f2111d2dd6c Category: RF FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF MOSFET N-CH JFET 10V SOT23
Series：*
Mfr：onsemi
Package：Cut Tape (CT)
Technology：-
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MMBFJ310LT1

Overview

The MMBFJ310LT1 is an N-channel JFET transistor designed for VHF/UHF amplifier applications. It features a SOT-23 (TO-236) surface-mount package with interchangeable drain and source terminals. The device operates with a maximum Drain-Source Voltage of 25 Vdc and Gate-Source Voltage of 25 Vdc. Electrical characteristics include a Zero-Gate-Voltage Drain Current (IDSS) ranging from 24 mA to 60 mA, and a Gate-Source Cutoff Voltage (VGS(off)) between -2.0 V and -6.5 V. Forward Transfer Admittance (|Yfs|) is specified at 8.0 mmhos minimum. Thermal resistance junction-to-ambient is 556 °C/W.

Feature Summary

Interchangeable drain and source terminals simplify circuit layout
Optimized for VHF and UHF frequency band amplification
RoHS compliant and lead-free construction

Applications

VHF/UHF small signal amplifiers
RF front-end circuits
Low noise amplifier stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging quantity and tape-and-reel specifications. Confirm that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component when a low-noise N-channel JFET is required for high-frequency signal processing. Ensure the design accommodates the specified IDSS range and thermal dissipation limits. Verify that the SOT-23 package dimensions fit the available PCB real estate constraints.

Part Context

This part belongs to the MMBFJ309L/310L family of silicon N-channel JFETs manufactured by onsemi. It shares the same pinout and general electrical profile as the MMBFJ310LT3G variant, differing primarily in shipping configuration. The device is classified under RF FETs and MOSFETs within the broader discrete semiconductor product category.