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Product Detailed Parameters
- Description：JFET N-CH 25V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：24 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V (VGS)
- Resistance - RDS(On)：-
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The MMBFU310LT1G is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi, designed for VHF and UHF amplifier applications. It features a single configuration housed in a surface-mount SOT-23-3 package. Key electrical parameters include a drain-source breakdown voltage of 25 V and a gate-source breakdown voltage of 25 V. The device operates with a drain-source current range of 24 mA to 60 mA at zero gate-source voltage. Constructed using silicon technology, it supports surface mount installation and is available in reel, cut tape, and MouseReel packaging formats.
Feature Summary
- Engineered specifically for VHF and UHF amplifier transistor functions
- Utilizes silicon technology for reliable semiconductor performance
- Provides single-channel N-Channel JFET configuration
Applications
- VHF amplifier circuits
- UHF amplifier stages
- RF signal processing components
Procurement Notes
Verify the exact part number suffix against official manufacturer documentation, as variations such as MMBFJ310LT1G or MMBFJ310LT1 exist within the same family. Confirm that the specific ordering code matches the required electrical characteristics and packaging type before procurement. Cross-reference datasheet revisions to ensure compatibility with design specifications.
Selection Notes
Select this component when designing circuits requiring N-channel JFETs for high-frequency amplification tasks. Ensure the application voltage does not exceed the 25 V breakdown limits for both drain-source and gate-source terminals. Consider the SOT-23-3 package constraints for thermal management and PCB layout requirements during the selection process.
Part Context
This component belongs to the MMBFJ310L series of JFETs produced by onsemi. It is functionally similar to other devices in the MMBFJ3xx series, which are commonly used in RF applications. The part represents a transition from older through-hole or larger packages to compact surface-mount solutions suitable for modern electronic assemblies.
Replacement Considerations
Publicly confirmed substitute part numbers for MMBFU310LT1G were not found in verified sources. Similar parts like MMBFJ310LT1G share the same functional description but require verification of pinout and electrical tolerances before substitution.
