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MMBT5551LT3G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 160V 0.6A SOT23-3. Review the specifications below when checking this part for your BOM.
The MMBT5551LT3G is a single NPN bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device supports a maximum DC collector current of 600 mA and operates with a collector-emitter voltage (VCEO) of 160 V. Additional voltage ratings include a collector-base voltage (VCBO) of 180 V and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 225 mW, with a minimum DC current gain (hFE) of 80 and a maximum of 250. The component functions within a temperature range of -55°C to +150°C.
Verify the specific suffix against official documentation, as LT3G indicates tape-and-reel packaging distinct from other variants. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Ensure the ordering part number matches the required electrical specifications and package type exactly before procurement.
Select this component when a single NPN transistor with 160 V breakdown voltage is required in a small outline package. Compare the 600 mA continuous current rating against load requirements. Verify that the 225 mW power dissipation limit accommodates the thermal design constraints of the target application environment.
This part belongs to the MMBT5551L series of small-signal transistors. It serves as a discrete alternative to integrated transistor arrays. The SOT-23-3 package allows for automated surface-mount assembly. It is designed for general electronic applications where moderate current and high voltage handling are necessary.
Check datasheets for direct pin-compatible substitutes such as the MMBT5551LT1G. Verify that any replacement maintains identical voltage ratings, current limits, and package dimensions to ensure mechanical and electrical compatibility without circuit redesign.
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