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Product Detailed Parameters
- Description：RF TRANS NPN 15V 600MHZ SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：6dB @ 60MHz
- Gain：15dB
- Power - Max：225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 3mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The onsemi MMBT918 is an NPN RF transistor designed for high-frequency applications. It operates with a collector-emitter voltage of 15 V and a collector-base voltage of 30 V, supporting a continuous collector current of 50 mA. The device features a gain-bandwidth product (fT) of 600 MHz at 4.0 mA and 10 V. Key electrical characteristics include a noise figure of 6.0 dB at 60 MHz and an output capacitance of 1.7 pF. Power dissipation reaches 225 mW in the SOT-23 package. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Optimized for RF amplification, oscillation, and frequency multiplication tasks within specified current ranges.
- Engineered for low-noise performance suitable for sensitive signal processing circuits.
- Provides high-speed switching capabilities supported by a substantial gain-bandwidth product.
Applications
- RF amplifier stages
- Oscillator circuits
- Frequency multipliers
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revisions match design requirements. Ensure proper handling procedures are followed due to electrostatic sensitivity. Validate packaging specifications against assembly line needs. Cross-reference pinouts to prevent installation errors during integration.
Selection Notes
Evaluate thermal management requirements based on ambient temperature conditions. Consider power dissipation limits when designing heat sinks or PCB layouts. Assess impedance matching networks to maximize gain and minimize reflections. Verify that operating frequencies align with the transistor's bandwidth specifications for optimal circuit performance.
Part Context
This component belongs to the family of NPN silicon planar transistors intended for VHF/UHF applications. It shares functional similarities with other RF devices but offers specific electrical parameters tailored for compact designs. The MMBT918 utilizes a surface-mount package to facilitate automated assembly processes in modern electronic manufacturing.
Replacement Considerations
Direct substitutes include the PN918 variant which shares identical electrical characteristics but utilizes a different TO-92 through-hole package. Designers must account for mechanical footprint differences when swapping between SOT-23 and TO-92 configurations without altering the underlying semiconductor properties.
FAQ
What is the maximum collector-emitter voltage rating?
The absolute maximum rating for collector-emitter voltage (VCEO) is 15 V.
At what frequency is the noise figure measured?
The noise figure specification of 6.0 dB is measured at a frequency of 60 MHz under specific test conditions.
What is the typical gain-bandwidth product?
The current gain-bandwidth product (fT) is typically 600 MHz when tested at a collector current of 4.0 mA and a collector-emitter voltage of 10 V.
