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MMBTA14LT1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 30V 0.3A SOT23-3. Review the specifications below when checking this part for your BOM.
The MMBTA14LT1 is an NPN silicon Darlington amplifier transistor manufactured by onsemi. It operates with a collector-emitter voltage of 30 Vdc and a continuous collector current of 300 mAdc. The device features a minimum DC current gain of 10,000 at 100 mAdc. Total power dissipation reaches 225 mW on FR-5 boards and 300 mW on alumina substrates. Junction temperature ranges from -55°C to +150°C. It utilizes the SOT-23 (TO-236AB) surface-mount package.
Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Ensure the component matches the required pinout configuration for the target PCB footprint. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement specifications.
Select this component when high current gain and low noise are critical requirements. Evaluate thermal management needs based on the chosen substrate material, as power dissipation varies significantly between FR-5 and alumina layouts. Confirm that the 30 Vdc voltage rating aligns with the maximum circuit operating conditions.
This part belongs to the MMBTA13/14 series of NPN Darlington transistors designed for small-signal applications. It shares the same physical package and general topology as the MMBTA13LT1 but offers higher current gain specifications. The series is widely used in consumer electronics and industrial control systems requiring compact amplification solutions.
MMBTA13LT1G serves as a functional substitute within the same family, offering lower gain thresholds.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.