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The MMBTH10-4LT1G is an NPN silicon VHF/UHF transistor manufactured by onsemi, housed in a surface-mount SOT-23 (CASE 318) package. It features a collector-emitter voltage of 25 Vdc and a collector-base voltage of 30 Vdc. The device operates with a maximum total power dissipation of 225 mW on an FR-5 board at 25°C ambient temperature. Electrical characteristics include a DC current gain ranging from 60 to 240 and a current-gain bandwidth product of 650 MHz to 800 MHz under specified test conditions.
Verify the specific ordering suffix to confirm the required packaging quantity and prefix designation. Confirm that the component meets all necessary environmental compliance requirements for the intended application before finalizing procurement decisions.
Select this component based on its suitability for high-frequency operations within the VHF and UHF spectrum. Ensure the design accommodates the specified thermal resistance and power dissipation limits to maintain reliable performance under operating conditions.
This part belongs to the MMBTH10L family of VHF/UHF transistors produced by onsemi. The series includes variants such as MMBTH10LT1G and NSVMMBTH10LT1G, which share similar electrical profiles but may differ in packaging quantities or specific automotive qualification prefixes.
Direct substitutes include MMBTH10LT1G and NSVMMBTH10LT1G. Verify pinout compatibility and electrical parameter alignment when considering alternative components from other manufacturers.